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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4918/D Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: * Low Saturation Voltage -- VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp * Excellent Power Dissipation Due to Thermopad Construction -- PD = 30 W @ TC = 25_C * Excellent Safe Operating Area * Gain Specified to IC = 1.0 Amp * Complement to NPN 2N4921, 2N4922, 2N4923 *MAXIMUM RATINGS Ratings 2N4918 thru 2N4920* *Motorola Preferred Device 3 AMPERE GENERAL-PURPOSE POWER TRANSISTORS 40 - 80 VOLTS 30 WATTS PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I III II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II II II IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II II III I I I I I II II IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I II II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII Symbol VCEO VCB VEB IC* IB 2N4918 40 40 2N4919 60 60 2N4920 80 80 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 1.0 3.0 1.0 Collector Current -- Continuous (1) Base Current Total Power Dissipation @ TC = 25C Derate above 25_C Operating & Storage Junction Temperature Range PD 30 0.24 Watts W/_C TJ, Tstg - 65 to + 150 CASE 77-08 TO-225AA TYPE _C THERMAL CHARACTERISTICS (2) Characteristic Symbol JC Max Unit Thermal Resistance, Junction to Case 4.16 _C/W * Indicates JEDEC Registered Data for 2N4918 Series. (1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual current-handling capability of the device (See Figure 5). (2) Recommend use of thermal compound for lowest thermal resistance. 40 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (C) 125 150 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N4918 thru 2N4920 * Indicates JEDEC Registered Data. (1) Pulse Test: PW 300 s, Duty Cycle SMALL-SIGNAL CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) 2 VBE(off) 0 Vin Small-Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Current-Gain -- Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (1) (IC = 1.0 Adc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (1) (IC = 1.0 Adc, IB = 0.1 Adc) Collector-Emitter Saturation Voltage (1) (IC = 1.0 Adc, IB = 0.1 Adc) DC Current Gain (1) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = Rated VCB, IE = 0) Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) APPROX -11 V APPROX -11 V Figure 2. Switching Time Equivalent Test Circuit Vin t3 TURN-OFF PULSE t, TIME ( s) t1 t2 [ 0 APPROX 9.0 V t1 < 15 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0% Characteristic VCC Vin Cjd << Ceb [ 2.0% RB RC + 4.0 V RB and RC varied to obtain desired current levels SCOPE 0.1 0.07 0.05 3.0 0.3 0.2 0.7 0.5 1.0 2.0 5.0 VCC = 30 V VBE(off) = 0 10 20 30 2N4918 2N4919 2N4920 2N4918 2N4919 2N4920 VCC = 30 V td Motorola Bipolar Power Transistor Device Data VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol Figure 3. Turn-On Time 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) ICBO ICEO IEBO VCC = 60 V ICEX VCC = 30 V IC/IB = 20 Cob hFE hfe fT Min 3.0 25 40 30 10 40 60 80 -- -- -- -- -- -- -- -- -- -- -- tr VBE(off) = 2.0 V Max -- 150 -- 100 1.3 1.3 0.6 1.0 0.1 0.1 0.5 0.5 0.5 0.5 -- -- -- -- -- IC/IB = 10, UNLESS NOTED TJ = 25C TJ = 150C VCC = 60 V 500 700 1000 mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc pF -- -- 2N4918 thru 2N4920 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.01 SINGLE PULSE P(pk) JC(t) = r(t) JC JC = 4.16C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 D = 0.5 0.2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5.0 ms TJ = 150C dc 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ TC = 25C PULSE CURVES APPLY BELOW RATED VCEO 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 1.0 ms 100 s 5.0 2.0 0.5 0.2 0.1 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 5. Active-Region Safe Operating Area 5.0 3.0 2.0 t s , STORAGE TIME ( s) 1.0 0.7 0.5 0.3 0.2 ts = ts - 1/8 tf TJ = 25C TJ = 150C IB1 = IB2 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 500 700 1000 IC/IB = 10 IC/IB = 20 5.0 3.0 2.0 t f , FALL TIME ( s) 1.0 0.7 0.5 0.3 0.2 IC/IB = 10 IC/IB = 20 TJ = 25C TJ = 150C VCC = 30 V IB1 = IB2 0.1 0.07 0.05 0.1 0.07 0.05 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 500 700 1000 Figure 6. Storage Time Figure 7. Fall Time Motorola Bipolar Power Transistor Device Data 3 2N4918 thru 2N4920 TYPICAL DC CHARACTERISTICS 1000 700 500 hFE, DC CURRENT GAIN 300 200 100 70 50 30 20 10 2.0 3.0 5.0 25C - 55C TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 IC = 0.1 A 0.8 0.25 A 0.5 A 1.0 A VCE = 1.0 V 0.6 TJ = 25C 0.4 0.2 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 50 100 200 Figure 8. Current Gain RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 9. Collector Saturation Region 108 IC = 10 ICES 107 106 105 104 103 ICES VALUES OBTAINED FROM FIGURE 13 0 30 60 90 120 150 VOLTAGE (VOLTS) VCE = 30 V 1.5 1.2 TJ = 25C IC ICES IC = 2x ICES 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 VCE(sat) @ IC/IB = 10 0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (mA) Figure 10. Effects of Base-Emitter Resistance Figure 11. "On" Voltage 102 TEMPERATURE COEFFICIENTS (mV/ C) IC, COLLECTOR CURRENT ( A) 101 TJ = 150C 100 10-1 100C 10- 2 104 REVERSE 103 - 0.2 - 0.1 25C FORWARD 0 + 0.1 + 0.2 IC = ICES VCE = 30 V + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 2.0 3.0 5.0 VB FOR VBE 10 20 30 50 *VC FOR VCE(sat) *APPLIES FOR IC/IB < hFE @ VCE 2 + 1.0 V TJ = 100C to 150C TJ = - 55C to +100C + 0.3 + 0.4 + 0.5 100 200 300 500 1000 2000 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut-Off Region Figure 13. Temperature Coefficients 4 Motorola Bipolar Power Transistor Device Data 2N4918 thru 2N4920 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 5 2N4918 thru 2N4920 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N4918/D* 2N4918/D |
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